Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition
Gehui Zhang, Luchen Chen, Le Wang, Zhanjie Lu, Haoyu Dong, Zhihai Cheng, Xu Zhang, Xiaohui Xu, Bin Wang, Shanshan Chen
Abstract
An improved template method has been developed to synthesize subnanometer-thick 2D GaN films through the balance of nitridation and ion etching during N 2 plasma enhanced CVD.
Topics & Concepts
Chemical vapor depositionMaterials sciencePlasmaPlasma etchingEtching (microfabrication)OptoelectronicsBand gapPlasma processingNanotechnologyWide-bandgap semiconductorDeposition (geology)Plasma-enhanced chemical vapor depositionChemical engineeringLayer (electronics)EngineeringBiologySedimentPhysicsQuantum mechanicsPaleontologyGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties