Partially Crystallized Ultrathin Interfaces between GaN and SiN<i><sub>x</sub></i> Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing
Xinhua Wang, Yange Zhang, Sen Huang, Haibo Yin, Jie Fan, Wei Ke, Yingkui Zheng, Wenwu Wang, Haojie Jiang, Xuebang Wu, Xianping Wang, C.S. Liu, Xinyu Liu
Abstract
The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energy-activated Ga2O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML θ-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.