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The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K

Ç. Ş. Güçlü, Ahmet Faruk Özdemir, Durmuş Ali Aldemir, Ş. Altındal

2021Journal of Materials Science Materials in Electronics27 citationsDOI

Topics & Concepts

Ohmic contactAtmospheric temperature rangeSchottky diodeSchottky barrierMaterials scienceDiodeThermal conductionQuantum tunnellingTemperature coefficientBand gapAnalytical Chemistry (journal)OptoelectronicsReverse leakage currentChemistryCondensed matter physicsNanotechnologyLayer (electronics)ChromatographyComposite materialPhysicsMeteorologySemiconductor materials and interfacesSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis
The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K | Litcius