Sub-5-nm Monolayer Boron Pnictide MOSFETs for <i>n</i>- and <i>p</i>-Type High-Performance Applications

Abstract

Channel materials with symmetrical performances for n- and p-type transistors and shrinking transistors to the ultrascale limit are essential for CMOS integrated circuits (ICs) in the coming post-$\mathrm{Si}$ era. Monolayer (ML) boron pnictides (i.e., $\mathrm{BP}$ and $\mathrm{B}\mathrm{As}$) possess both high electron and hole mobilities and flat atomic thick configurations, which are beneficial for symmetrical performance and short natural lengths, respectively. Herein, we provide a theoretical study on the device performances of sub-5-nm ML boron pnictide MOSFETs using the ab initio quantum transport method. Symmetrical n- and p-type performances are achieved for the ML boron pnictide MOSFETs. The optimal n- and p-type ML $\mathrm{BP}$ and $\mathrm{B}\mathrm{As}$ MOSFETs can reach the International Roadmap for Devices and Systems goals for the 2028 horizon for high-performance devices at gate lengths (${L}_{\mathrm{g}}$) of 3 and 5 nm, respectively. In particular, the optimal n-type (p-type) ML $\mathrm{BP}$ MOSFETs possess superhigh on-state currents (${I}_{\mathrm{ON}}$) of 2974 (2937) \textmu{}A/\textmu{}m at ${L}_{\mathrm{g}}$= 5 nm, exceeding most reported ML MOSFETs. Our study suggests that ML boron pnictides are prospective channel materials in the post-$\mathrm{Si}$ era for CMOS ICs.

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