Litcius/Paper detail

High Performance β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

Zhe Li, Zhaoqing Feng, Yu Xu, Qian Feng, Weidong Zhu, Dazheng Chen, Hong Zhou, Jincheng Zhang, Chunfu Zhang, Yue Hao

2021IEEE Electron Device Letters60 citationsDOI

Abstract

This letter demonstrates a high performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) Gate Dielectric. The SBPT shows a high Photo-to-dark-current ratio (PDCR) of 6.9×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , an I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">254 nm</sub> / I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">365 nm</sub> rejection ratio of 6.0×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> combined with an external quantum efficiency (EQE) of 6.4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> %. In addition, benefit from stronger control capability of the HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based gate structure, the fabricated SBPT reaches a record detectivity ( D *) of 1.1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> Jones and ultrahigh responsivity ( R) of 1.4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> A/W. Furthermore, short decay time ( τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> ) is obtained to be as low as 16 ms. These outstanding properties indicate that SBPT is promising for the solar-blind detection.

Topics & Concepts

PhysicsGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties