Direct Tellurization of Pt to Synthesize 2D PtTe<sub>2</sub> for High-Performance Broadband Photodetectors and NIR Image Sensors
Xiaowei Tong, Ya-Nan Lin, Rui Huang, Zhixiang Zhang, Can Fu, Di Wu, Lin‐Bao Luo, Zhongjun Li, Feng‐Xia Liang, Wei Zhang
Abstract
Platinum telluride (PtTe2) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe2 toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe2 films and the influence of growth conditions on the morphology of PtTe2. Electrical analysis reveals that the as-grown PtTe2 films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe2 and Si results in the formation of a PtTe2/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe2-based photodetector displays a broadband photoresponse to incident radiation in the range of 200–1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The R and D* of the PtTe2-based photodetector are found to be 0.406 A W–1 and 3.62 × 1012 Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τrise and τfall is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe2-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe2 material will be useful for application in NIR optoelectronics.