A Gd-doped HfO<sub>2</sub> single film for a charge trapping memory device with a large memory window under a low voltage
Yuxin Shen, Zhaohao Zhang, Qingzhu Zhang, Feng Wei, Huaxiang Yin, Qianhui Wei, Kuo Men
Abstract
program/erase cycles. It is considered that the high density of defect states and the reduction in the defect energy levels induced by Gd-doping contribute to the performance improvement.
Topics & Concepts
TrappingMaterials scienceDopingOptoelectronicsCharge (physics)VoltageDegradation (telecommunications)Threshold voltageNon-volatile memoryPerformance enhancementElectrical engineeringTransistorPhysicsBiologyEcologyEngineeringMedicinePhysical medicine and rehabilitationQuantum mechanicsSemiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance Devices