Magnetic and Dielectric Properties of Ti <sup>4+</sup>-doped M-type Hexaferrite BaFe<sub>12-</sub><i><sub>x</sub></i>Ti<i><sub>x</sub></i>O<sub>19</sub> Ceramics
Bai Jiawei, Jinglei Yang, Lü Zhenfei, TANG Xiaodong
Abstract
Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe 12 O 19 with Ti 4+ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe 12-x Ti x O 19 (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti 4+ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe 12-x Ti x O 19 is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti 4+ ions is low, it tends to replace Fe 3+ ions with up-spin. And the magnetization decreases with