Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications
Chiou-Ru Cheng, Meng‐Hung Tsai, Tsung-Hsien Hsu, Ming-Jen Li, Cheng‐Liang Huang
Topics & Concepts
Materials scienceSputteringResistive random-access memoryAnnealing (glass)OptoelectronicsIndium tin oxideElectrodeSputter depositionThin filmSchottky barrierOxideElectrical conductorNanotechnologyComposite materialMetallurgyChemistryPhysical chemistryDiodeAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials