BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain, Choong Hee Lee, Abdullah Mamun, Hao Xue, Zhanbo Xia, Shahadat H. Sohel, Mohammad Wahidur Rahman, Sanyam Bajaj, Caiyu Wang, Wu Lu, Asif Khan, Siddharth Rajan
Abstract
In this Letter, we demonstrate a Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diode with enhanced breakdown characteristics. By using BaTiO3, a high-k material, as a dielectric material between the anode and semiconductor, the peak electric field at the anode edge near the cathode was significantly reduced and an average breakdown field exceeding 8 MV/cm was achieved for devices with an anode to cathode spacing of <0.2 μm. In contrast, Pt/Al0.58Ga0.42N control Schottky diodes displayed an average breakdown field of ∼4 MV/cm for devices with similar dimensions. The use of a high-k dielectric can more effectively utilize the high breakdown fields in ultra-wide bandgap materials by proper management of the electric field. This demonstration thus provides a framework to realize ultra-scaled lateral devices with improved breakdown characteristics.