Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure
Sonntag, Jens Marius, Li, J., Plaud, A., Loiseau, A., Barjon, J., Edgar, J. H., Stampfer, Christoph
Abstract
Abstract Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around 10 µ m at low temperatures and electron-phonon scattering limited transport at room temperature.