Effects of thermal annealing on analog resistive switching behavior in bilayer HfO<sub>2</sub>/ZnO synaptic devices: the role of ZnO grain boundaries
Yeong-Jin An, Han Yan, Chae-Min Yeom, Jun-Kyo Jeong, Sunil Babu Eadi, Hi‐Deok Lee, Hyuk-Min Kwon
Abstract
, and the asymmetry ratio, which approached 1. The results offer valuable insights into the implementation of highly robust synaptic devices in neural networks.
Topics & Concepts
Materials scienceGrain boundaryAnnealing (glass)BilayerThermalOptoelectronicsResistive touchscreenComposite materialMembraneElectrical engineeringMicrostructureChemistryBiochemistryEngineeringPhysicsMeteorologyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering