Post‐Synthetic Interstitial Metal Doping for Efficient and Stable 3D/2D Heterostructured Perovskite Solar Cells
Chengxi Zhang, Ardeshir Baktash, Julian A. Steele, Dongxu He, Shanshan Ding, Saivineeth Penukula, Mengmeng Hao, Rijia Lin, Jingwei Hou, Nicholas Rolston, Miaoqiang Lyu, Peng Chen, Wu‐Qiang Wu, Lianzhou Wang
Abstract
Abstract Perovskite solar cells (PSCs) have experienced exceptional development in recent years, due to their outstanding photoelectronic properties and low‐cost solution processing. Many state‐of‐the‐art PSC designs have been effectively demonstrated using a stacked 3D perovskite/2D perovskite heterostructure, yet limitations arise due to the low conductivity of the 2D perovskite, the hidden buried interface of 3D perovskite, and halide ion migration within 3D/2D PSC device under operational bias. Here, these limitations are overcome by developing a novel and universal post‐synthetic metal (Zn 2+ ) doping strategy and realizing 3D/2D PSCs with superior efficiency and stability. Informed by ab initio calculations and synchrotron fine structure experiments, it is revealed that the introduced zinc ions are energetically favored at interstitial crystal sites, subsequently hindering the migration of halide ions and producing a beneficial shift toward a more n‐type character in the buried 3D perovskite interface. Combined with extensive photophysical characterization, the Zn 2+ ‐modified 3D/2D perovskite thin film is shown to strongly recover its photo‐carrier conductivity compared with the 3D/2D perovskite film, boosting the efficiency (22.90%) of PSCs while exhibiting improved humidity and operational stability.