Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al<sub>0.6</sub>Ga<sub>0.4</sub>N/AlN/sapphire
Kosuke Sato, Shinji Yasue, Kazuki Yamada, Shunya Tanaka, Tomoya Omori, Sayaka Ishizuka, Shohei Teramura, Yuya Ogino, Sho Iwayama, Hideto Miyake, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Abstract
An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse operation. The laser diode has a lattice-relaxed Al0.6Ga0.4N layer from the underlying AlN/sapphire template and a composition-graded p-AlGaN cladding layer. The multimodal laser spectrum with proper polarization properties at 298 nm was obtained over the threshold current at 0.90 A corresponding to 67 kA cm–2. By broadening the width of the p-electrode to 11.5 μm, the threshold current density decreased to 41 kA cm–2.
Topics & Concepts
Materials scienceSapphireLaserDiodeCladding (metalworking)UltravioletOptoelectronicsElectrodeLattice (music)Current densityOpticsChemistryPhysicsAcousticsQuantum mechanicsMetallurgyPhysical chemistryGaN-based semiconductor devices and materialsPhotocathodes and Microchannel PlatesSemiconductor Quantum Structures and Devices