11.9 A 105Gb/s Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-to-335GHz Signal and Integrated Waveguide Coupler
Jack W. Holloway, Georgios C. Dogiamis, Ruonan Han
Abstract
The rapid surge of data transmission within computation, storage and communication infrastructures is pushing the speed boundary of traditional copper-based electrical links. Recent realizations of 100Gb/s wired links require advanced FinFET technologies, highcost packaging/cables and power-consuming equalization. High-frequency waves over dielectric waveguides have been considered as an alternative solution that exploits the low-loss, broadband medium while maintaining compatibility with existing silicon IC platforms. However, since its debut in 2011 [1], this scheme, previously using ≤140GHz carriers, has only achieved data rates of up to 36Gb/s [2]. It is expected that higher carrier frequencies (e.g. >200GHz) and multi-channel aggregation would further increase the data rate while shrinking the interconnect size; but that scheme has been hindered by challenges related to the required high-order multiplexer and ultra-broadband waveguide coupler operating efficiently at sub terahertz (sub-THz) frequencies. In this paper, using a 130nm SiGe BiCMOS technology, we present a multi-channel, multiplexer/coupler-integrated transmitter (Tx) that delivers a data rate of 105Gb/s (3×35Gb/s). To demodulate each channel, a 35Gb/s coupler-integrated receiver (Rx) is also developed. Our link, including the chipset and a 0.4mm-wide, 30cm-long dielectric ribbon, experimentally demonstrates the potential speed, efficiency, size and cost advantages of THz fiber links in high-speed inter-server and backplane fabrics.