Manifesting the versatile properties of the Magnesium MOS diodes for optoelectronic applications
G. Alan Sibu, V. Balasubramani, P. Gayathri, M. Aslam Manthrammel, Mohd. Shkir
Abstract
This pioneering study explores the thermally-induced morphological and optical transformations of spray pyrolyzed Magnesium oxide (MgO) thin films , tailored for metal-oxide-semiconductor (MOS) Schottky barrier diodes . By leveraging MgO's unique attributes, including its expansive band gap, tailored surface topography , and tuneable conductivity, we harness the material's potential for cutting-edge optoelectronic applications . Utilizing the cost-effective and widely available JNSP technique, we deposit large-area thin films with unparalleled uniformity. A comprehensive characterization of the coated thin films , conducted using advanced analytical tools such as XRD , UV, FE-SEM, EDX and XPS, reveals that an optimal substrate temperature of 450 °C yields enhanced structural, morphological, and optical properties . The fabricated MOS diode , incorporating the optimized MgO thin films , exhibit superior photodiode parameters, including a reduced ideality factor of 3.81 (under light condition) and 5.05 (in dark condition), an elevated barrier height of 0.73 eV (under light condition) and 0.71 eV (in dark condition), and a diminished leakage current. Notably, these diodes demonstrate a high photosensitivity of 48.96 %, a responsivity of 27.11 mA/W, a quantum efficiency of 1.05 %, and a detectivity of 5.31 × 10 −9 Jones. These findings have far-reaching implications for the development of high-performance MOS Schottky barrier diode, poised to revolutionize the landscape of advanced optoelectronic and photovoltaic applications.