Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
Eddy Simoen, Barry O’Sullivan, N. Ronchi, G. Van den bosch, D. Linten, Jan Van Houdt
Abstract
The low-frequency noise of planar transistors with ferroelectric Si-doped HfO2 as a gate dielectric is investigated and compared with that of undoped HfO2 reference devices. Predominantly 1/f-like spectra have been observed, which are governed by carrier number fluctuations or trapping in the gate stack. The corresponding noise power spectral density is about a factor of three higher for the reference devices, indicating that Si-doping reduces in a way similar to the trap density in the HfO2 layer.
Topics & Concepts
Materials scienceOptoelectronicsGate dielectricNoise (video)DopingDielectricInfrasoundTransistorStack (abstract data type)PlanarField-effect transistorElectric fieldHigh-κ dielectricTrappingFlicker noiseNoise figureElectrical engineeringPhysicsVoltageArtificial intelligenceQuantum mechanicsAmplifierProgramming languageEngineeringAcousticsBiologyComputer graphics (images)Computer scienceCMOSImage (mathematics)EcologyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design