Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor
Xianglong Li, Xiaoqiao Yang, Zhe Zhang, Teng Wang, Yabin Sun, Ziyu Liu, Xiaojin Li, Yanling Shi, Jun Xu
Abstract
In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources, including line edge roughness (LER), gate edge roughness (GER), and work-function variation (WFV), are performed in RFET using MATLAB and 3-D TCAD. The variation of ON-state current ION due to LER presents a weak correlation with that of OFF-state current IOFF. Performance variation caused by GER is mainly attributed to the control GER. WFV in control gate and source dominates the variations of ON-state characteristics. The total overall performance fluctuations are primarily attributed to WFV. In the sight of ION, WFV contributed up to 84.7% and 82.8% of the total fluctuations for n- and p-type, respectively.