Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device
Jinwoong Yang, Hojeong Ryu, Sungjun Kim
Topics & Concepts
Neuromorphic engineeringElectroformingMaterials sciencePolarity (international relations)MemristorReset (finance)OptoelectronicsX-ray photoelectron spectroscopyResistive random-access memoryConductanceInterface (matter)VoltageComputer scienceElectronic engineeringLayer (electronics)Electrical engineeringNanotechnologyChemistryPhysicsComposite materialCondensed matter physicsEngineeringBiochemistryNuclear magnetic resonanceMachine learningCapillary numberCapillary actionFinancial economicsArtificial neural networkCellEconomicsAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringCCD and CMOS Imaging Sensors