Bridgman growth and electrical properties of Nd-doped PMN–PT single crystal with ultrahigh piezoelectricity
Ziyun Chen, Tingyu Deng, Rui Chen, Di Lin, Wenning Di, Hongbing Chen, Haosu Luo, Tao Han
Abstract
The work presents electrical properties of Nd–PMN–PT single crystal grown by Bridgman method. As-grown crystal has been verified to have ultrahigh piezoelectric coefficient d 33 with maximum value of 3650 pC N −1 under alternating current polarization.
Topics & Concepts
PiezoelectricityMaterials sciencePiezoelectric coefficientDopingSingle crystalPolarization (electrochemistry)Crystal (programming language)Crystal growthOptoelectronicsAlternating currentCrystallographyComposite materialChemistryElectrical engineeringVoltagePhysical chemistryEngineeringProgramming languageComputer scienceAcoustic Wave Resonator TechnologiesFerroelectric and Piezoelectric MaterialsPhotorefractive and Nonlinear Optics