High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics
Kapil Narang, Akhilesh Pandey, Ruby Khan, Vikash Kumar Singh, Rajesh K. Bag, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh
Topics & Concepts
Metalorganic vapour phase epitaxyMaterials scienceRaman spectroscopyFull width at half maximumLayer (electronics)Substrate (aquarium)NucleationGrowth rateEpitaxyAnalytical Chemistry (journal)DislocationCrystallographyOptoelectronicsOpticsChemistryComposite materialOceanographyGeologyPhysicsChromatographyGeometryMathematicsOrganic chemistryGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesMetal and Thin Film Mechanics