650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk
Junjie Yang, Jin Wei, Maojun Wang, Muqin Nuo, Han Yang, Teng Li, Jingjing Yu, Xuelin Yang, Yilong Hao, Jinyan Wang, Bo Shen
Abstract
A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> of the VB-HEMT is appreciably reduced.