High quality β-Ga2O3 bulk crystals, grown by edge-defined film-fed growth method: Growth features, structural, and thermal properties
D. A. Bauman, D.I. Panov, V. A. Spiridonov, А.В. Кремлева, А. В. Асач, E.V. Tambulatova, A. V. Sakharov, А. Е. Романов
Abstract
Bulk crystals of β-Ga2O3 were successfully grown by the edge-defined film-fed growth method. The crystalline quality of the obtained crystals was analyzed by the method of x-ray diffractometry. The full width at half maximum of the rocking curve was about 72 arcsec. The optical bandgap was determined by analyzing the optical transmission spectra and amounted to 4.7 eV. The hot disk method was used to obtain the thermal conductivity of the sample along the [001] direction in the temperature range from 30 to 120 °C. The maximum value of thermal conductivity obtained at 30 °C was 9.25 W/(m K).
Topics & Concepts
Materials scienceThermal conductivityEnhanced Data Rates for GSM EvolutionAnalytical Chemistry (journal)Band gapQuality (philosophy)ThermalAtmospheric temperature rangeRange (aeronautics)OpticsOptoelectronicsChemistryComposite materialThermodynamicsPhysicsChromatographyTelecommunicationsComputer scienceQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques