Observation of Stimulated Brillouin Scattering in Silicon Nitride Integrated Waveguides
Flavien Gyger, Junqiu Liu, Fan Yang, Jijun He, Arslan S. Raja, Rui Ning Wang, Sunil A. Bhave, Tobias J. Kippenberg, Luc Thévenaz
Abstract
Silicon nitride (Si_{3}N_{4}) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore, understanding all nonlinear optical properties of Si_{3}N_{4} is important. So far, only stimulated Brillouin scattering (SBS) has not yet been reported. Here we observe, for the first time, backward SBS in fully cladded Si_{3}N_{4} waveguides. The Brillouin gain spectrum exhibits an unusual multipeak structure resulting from hybridization with high-overtone bulk acoustic resonances of the silica cladding. The reported intrinsic Si_{3}N_{4} Brillouin gain at 25 GHz is estimated as 4×10^{-13} m/W. Moreover, the magnitude of the Si_{3}N_{4} photoelastic constant is estimated as |p_{12}|=0.047±0.004, which is nearly 6 times smaller than for silica. Since SBS imposes an optical power limitation for waveguides, our results explain the capability of Si_{3}N_{4} to handle high optical power, central for integrated nonlinear photonics.