Frenkel Defect‐modulated Anti‐thermal Quenching Luminescence in Lanthanide‐doped Sc<sub>2</sub>(WO<sub>4</sub>)<sub>3</sub>
Yang Wei, Yue Pan, En‐Long Zhou, Ze Yuan, Hao Song, Yilin Wang, Jie Zhou, Jiahui Rui, Mengjiao Xu, Lixin Ning, Zhanning Liu, Hongyu Wang, Xiaoji Xie, Xiaobin Tang, Haiquan Su, Xianran Xing, Ling Huang
Abstract
Abstract Although large amount of effort has been invested in combating thermal quenching that severely degrades the performance of luminescent materials particularly at high temperatures, not much affirmative progress has been realized. Herein, we demonstrate that the Frenkel defect formed via controlled annealing of Sc 2 (WO 4 ) 3 :Ln (Ln=Yb, Er, Eu, Tb, Sm), can work as energy reservoir and back‐transfer the stored excitation energy to Ln 3+ upon heating. Therefore, except routine anti‐thermal quenching, thermally enhanced 415‐fold downshifting and 405‐fold upconversion luminescence are even obtained in Sc 2 (WO 4 ) 3 :Yb/Er, which has set a record of both the Yb 3+ ‐Er 3+ energy transfer efficiency (>85 %) and the working temperature at 500 and 1073 K, respectively. Moreover, this design strategy is extendable to other hosts possessing Frenkel defect, and modulation of which directly determines whether enhanced or decreased luminescence can be obtained. This discovery has paved new avenues to reliable generation of high‐temperature luminescence.