Proposal for low-power atom trapping on a GaN-on-sapphire chip
Aiping Liu, Lei Xu, Xin‐Biao Xu, Guang-Jie Chen, Pengfei Zhang, Guo‐Yong Xiang, Guang‐Can Guo, Qin Wang, Chang‐Ling Zou
Abstract
Hybrid photon-atom integrated circuits, which include photonic microcavities and trapped single neutral atoms in their evanescent field, have great potential for quantum information processing. In this platform, the atoms provide single-photon nonlinearity and long-lived memory, which are complementary to the excellent passive photonic devices in conventional quantum photonic circuits. In this work, we propose a stable platform for realizing hybrid photon-atom circuits based on an unsuspended photonic chip. By introducing high-order modes in the microring, a feasible evanescent-field trap potential well $\ensuremath{\sim}0.26\phantom{\rule{0.16em}{0ex}}\mathrm{mK}$ could be obtained by only 10-$\mathrm{mW}$-level power in the cavity, compared with the 100-mW-level power required in the scheme based on fundamental modes. Based on our scheme, stable single-atom trapping with relatively low laser power is feasible for future studies on high-fidelity quantum gates, single-photon sources, and many-body quantum physics based on a controllable atom array in a microcavity.