Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography
Zhihao Wang, Jinping Chen, Tianjun Yu, Yi Zeng, Xudong Guo, Shuangqing Wang, Timothée Allenet, Michaela Vockenhuber, Yasin Ekinci, Guoqiang Yang, Yi Li
Abstract
with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.
Topics & Concepts
SulfoniumResistMaterials sciencePolystyreneTrifluoromethanesulfonatePolymer chemistryLithographyChemical engineeringNanotechnologyOrganic chemistryOptoelectronicsLayer (electronics)PolymerComposite materialCatalysisChemistrySalt (chemistry)EngineeringAdvancements in Photolithography TechniquesNanofabrication and Lithography TechniquesIntegrated Circuits and Semiconductor Failure Analysis