Litcius/Paper detail

34.1 A 28nm 83.23TFLOPS/W POSIT-Based Compute-in-Memory Macro for High-Accuracy AI Applications

Yang Wang, Xiaolong Yang, Yubin Qin, Zhiren Zhao, Ruiqi Guo, Zhiheng Yue, Huiming Han, Shaojun Wei, Yang Hu, Shouyi Yin

202422 citationsDOI

Abstract

Rapidly expanding artificial intelligence (Al) models, for complex AI tasks, drive high-energy efficiency and high-precision requirements for Al processors [1–6]. Floating-point CIM (FP-CIM) is a promising technique to improve energy efficiency and maintain accuracy. However, FP-CIM with FP32/FP16/BF16 suffers from a performance bottleneck due to its large storage requirements and its considerable MAC power. The emerging POSIT data format, exploiting dynamic bit width that adapts to varied data distributions, can use a low bit width to achieve nearly the same training and inference accuracy as high bit width FP (POSIT8 $\approx$ FP16 and POSIT16 $\approx$ FP32) [6]. The POSIT data consists of 4 parts: sign (S), regime (R), exponent (E), and mantissa (M). It is defined as POSIT($n, es$), where n is the total bit width and $es$ is the E bit width. The R and M bit width varies dynamically, allowing a data range and precision trade-off at runtime. If R is r bits, then M is m bits, where $m=n-r-e s-1$. R is a unary (thermometer) code with successive Os and 1s: eg. 11110 and 00001. The decimal value of R is the number of successive 1’s count minus constant value 1 for positive values, and it is successive 0’s count for negative values (R=3 for “11110”, R=−4 for “00001”). POSIT computing requires the decoding R to get the POSIT value, which is $(-1)^{\mathrm{S}} \times\left(2^{\mathrm{es}}\right)^{\mathrm{R}} \times 2^{\mathrm{E}} \times 1$. M. With the dynamic data expression to adapt data distribution, POSIT8 can achieve comparable accuracy to BF16 for image classification on VIT-B with a $7.12 \times$ energy reduction.

Topics & Concepts

MacroComputer scienceParallel computingArtificial intelligenceProgramming languageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices