Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe<sub>2</sub>/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures
Andreas Beer, Klaus Zollner, Caique Serati de Brito, Paulo E. Faria, Philipp Parzefall, Talieh S. Ghiasi, Josep Ingla‐Aynés, Samuel Mañas‐Valero, Carla Boix‐Constant, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Herre S. J. van der Zant, Y. Galvão Gobato, Christian Schüller
Abstract
High Resolution Image Download MS PowerPoint Slide Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe 2 and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe 2 is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe 2 /SiO 2, driven by a Mott transition in the type-III band-aligned heterostructure.