Functional Demonstration of a Fully Integrated Magneto-Electric Spin-Orbit Device
Diogo C. Vaz, Chia‐Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Van Tuong Pham, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Vincent Garcia, S. Fusil, Manuel Bibès, Yenlin Huang, Bhagwati Prasad, R. Ramesh, Fèlix Casanova, Ian A. Young
Abstract
We present the first experimental realization of a magnetoelectric spin-orbit (MESO) logic device at room temperature. Two logic states are determined by the magnetization direction of a nanostructured CoFe element, which is switched by a magnetoelectric BiFeO3 layer (WRITE) and detected through spin-to-charge conversion effect in a Pt element (READ).
Topics & Concepts
Realization (probability)Magnetoelectric effectMagnetizationCondensed matter physicsMagnetoMaterials scienceSpin (aerodynamics)Orbit (dynamics)OptoelectronicsVoltagePhysicsMagnetic fieldFerroelectricityEngineeringMultiferroicsQuantum mechanicsDielectricAerospace engineeringThermodynamicsMathematicsStatisticsMultiferroics and related materialsMagnetic properties of thin filmsFerroelectric and Piezoelectric Materials