Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect
Po‐Hung Tan, Che‐Hao Hsu, Ying‐Chun Shen, Chien‐Ping Wang, Kun‐Lin Liou, Jiaw‐Ren Shih, Chrong Jung Lin, Ling Lee, Kuangye Wang, Hongmin Wu, Tsung‐Yu Chiang, Yue‐Der Chih, Jonathan Chang, Ya‐Chin King, Yu‐Lun Chueh
Abstract
Abstract A 2D SnSe 2 layered film‐based gas detector incorporating a floating‐gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm −1 can be obtained using the 2D SnSe 2 layered film with a thickness of 10 nm. The 2D SnSe 2 layered film‐based complementary metal–oxide–semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real‐time response of the sub‐ppm detection limit on NO 2 gas. In addition, the synthesis process of the SnSe 2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state‐of‐the‐art gas sensors.