High-Quality Wave-Chaotic Microlasers from Deformed Halide Perovskite Cavities
Feng Li, Yuting Wu, Peiran Chen, Likuan Feng, Ziming Wang, Yinjuan Ren, Yue Wang
Abstract
Semiconductor wave-chaotic microlasers are promising for integratable coherent light sources and serve as an ideal platform to study quantum chaos and non-Hermitian issues. However, the development of high-quality wave-chaotic microlasers from traditional semiconductors has remained challenging until now. In this work, we report for the first time the high-performance wave-chaotic lasing from inorganic halide perovskites (IHPs) by a bottom-up method. The key success lies in the breaking of the crystal growth anisotropy of IHPs to establish the kinetic growth model. The perovskite wave-chaotic microlasers are found to show a low pump threshold, a high Q-factor, and strikingly well-defined output directionality with a narrow emission angle down to ∼9°, which readily fit the criteria for on-chip integrated optoelectronic applications. According to theoretical analysis, the existence of high-Q scar modes strongly localized on unstable periodic orbits is responsible for the high-performance chaotic lasing, and the directional far-field emission patterns are well illustrated by the refractive escape at the boundary of scar modes. These findings could advance the development of chaotic semiconductor microlasers.