Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave
Lei Wang, Changchun Chai, Tianlong Zhao, Fu-Xing Li, Yingshuo Qin, Yintang Yang
Topics & Concepts
High-electron-mobility transistorMaterials sciencePiezoelectricityWurtzite crystal structureMicrowaveOptoelectronicsTransistorGallium nitrideVoltagePower (physics)Electric potential energyComposite materialElectrical engineeringEngineeringPhysicsTelecommunicationsMetallurgyLayer (electronics)ZincQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesRadio Frequency Integrated Circuit Design