Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga₂O₃ by Photocapacitance Method

Abstract

Deep traps in n‐type α‐Ga 2 O 3 grown by mist chemical vapor deposition are analyzed by the photocapacitance method and deep‐level optical spectroscopy. The trap levels at E c −(≈2.0 eV) ( E 1 ), E c −(≈2.5 eV) ( E 2 ), and E c −(≈3.2 eV) ( E 3 ) are evident and their concentrations are 3.5 × 10 14 , 3.6 × 10 14 , and 6.2 × 10 15 cm −3 , respectively, which are much lower than ever reported for α‐Ga 2 O 3 . The Frank–Condon shift of all three traps is large as seen for β‐Ga 2 O 3 , indicating a high degree of lattice coupling in the midgap state in α‐Ga 2 O 3 .

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