Temperature-induced potential barriers in piezoelectric semiconductor films through pyroelectric and thermoelastic couplings and their effects on currents
Yilin Qu, Feng Jin, Jiashi Yang
Abstract
We study temperature effects in piezoelectric semiconductor thin films through pyroelectric and thermoelastic as well as piezoelectric couplings. Two-dimensional equations based on the macroscopic theory of piezoelectric semiconductors for extensional deformations of the films are used. A p-type ZnO film with an in-plane c-axis is analyzed. It is shown through a linear and theoretical analysis that a local temperature change produces a pair of a potential barrier and a well in the film. A nonlinear numerical analysis is then performed when a voltage is also applied, showing that the potential barrier blocks the in-plane motion of the holes and thus affects the current density distribution. The effects of various physical and geometric parameters are examined. The results obtained provide the theoretical foundation for thermally manipulating currents in piezoelectric semiconductor films for piezotronic applications.