A high-sensitivity epitaxial Ge/PbSe/CdSe/Bi<sub>2</sub>Se<sub>3</sub> p<sup>+</sup>pBn<sup>+</sup> barrier heterojunction for uncooled middle infrared detection
Leisheng Su, Yun Liu, Weili Liu, Dong Yang, K. Chen, Yiming Yang, Haofei Shi, Chang Yang, Deping Huang, Jijun Qiu
Abstract
A new p + pBn + barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.
Topics & Concepts
Materials scienceHeterojunctionInfraredEpitaxyOptoelectronicsSensitivity (control systems)GermaniumNanotechnologyOpticsSiliconLayer (electronics)PhysicsElectronic engineeringEngineeringThermography and Photoacoustic TechniquesChalcogenide Semiconductor Thin FilmsAdvanced Semiconductor Detectors and Materials