Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm
Joshua W. Kleppinger, Sandeep K. Chaudhuri, OmerFaruk Karadavut, Ritwik Nag, Krishna C. Mandal
Topics & Concepts
EpitaxyTrappingMaterials scienceSchottky diodeDiffusionChemical vapor depositionSchottky barrierCarrier lifetimeDetectorOptoelectronicsCharge carrierDeep-level transient spectroscopyAnalytical Chemistry (journal)ElectronDopingOpticsChemistrySiliconNanotechnologyPhysicsLayer (electronics)ChromatographyQuantum mechanicsBiologyThermodynamicsDiodeEcologySilicon Carbide Semiconductor TechnologiesSemiconductor materials and interfacesSemiconductor materials and devices