2D TMD‐Based Lateral Heterostructures: Preparation, Property, and Application
Miaomiao Liu, Shanhao Li, Yukun Guo, Liqiang Zhang, Dingyi Shen, Qingsong Ye, Zifan Peng, Weixu Qi, Ruixia Wu, Jia Li, Xidong Duan
Abstract
Abstract Two‐dimensional transition metal dichalcogenides (2D‐TMDs) have attracted considerable attention from academic and industrial fields due to their atomical thin thickness and unique and tunable physical and chemical properties. Especially, 2D TMD‐based lateral heterostructures (LHSs), formed by one‐to‐one covalent bonding of 2D TMDs with similar lattice structure and constant, provide a new freedom and exciting material platforms for exploring exotic physical and chemical properties at micro–nano–pico scales and show great potential applications in high density integrated electric and photoelectric devices. However, progress in this field has been largely limited by the availability of high‐quality LHSs, which cannot be obtained by simple stacking but only by precise synthesis. Firstly, this review summarizes the latest research on LHSs, covering synthesis strategies like chemical vapor deposition (CVD) to molecular beam epitaxy (MBE), and analyzing growth mechanisms. Secondly, it explores interface properties (such as bandgap tuning, strain engineering, and interfacial exciton effects), linking them to device performance. Additionally, it also highlights applications in high‐speed electronics, optoelectronics, and catalysis, highlighting their cross‐disciplinary potential. Finally, it addresses challenges like large‐scale fabrication and defect control, and proposes future directions in material design and multifunctional integration. This provides a key reference for the development of 2D‐TMDs‐based LHSs.