Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
Linzhi Peng, Xiuli Li, Jun Zheng, Xiangquan Liu, Mingming Li, Zhi Liu, Chunlai Xue, Yuhua Zuo, Buwen Cheng
Topics & Concepts
ElectroluminescenceLight-emitting diodeOptoelectronicsQuantum wellBand gapMaterials sciencePhysicsOpticsNanotechnologyLaserLayer (electronics)Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices