Bilayer MoO<sub><i>X</i></sub>/CrO<sub>X</sub> Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells
Jingye Li, Tianyu Pan, Jilei Wang, Shuangying Cao, Yinyue Lin, Bram Hoex, Zhongquan Ma, Linfeng Lu, Liyou Yang, Baoquan Sun, Dongdong Li
Abstract
Molybdenum oxide (MoOX, X < 3) has been successfully demonstrated as an efficient passivating hole-selective contact in crystalline Si (c-Si) heterojunction solar cells because of its large bandgap (∼3.2 eV) and work function (∼6.9 eV). However, the severe performance degradation coming from the instability of the MoOX and its interfaces has not been well addressed. In this work, we started with a c-Si(p)/MoOX heterojunction solar cell that yielded a power conversion efficiency (PCE) of 15.86%, in which the MoOX film was synthesized by industry-compatible atomic layer deposition (ALD). The initial PCE dropped to 10.20% after 2 days because of severe migration of O and Ag at the MoOX/Ag interface. We solved this by the insertion of a CrOX layer between the MoOX layer and the Ag electrode. The solar cell was found to be stable for more than 8 months in air because of the suppression of interface degradation. Our work demonstrates an effective way of improving the stability of silicon solar cells with transition metal oxide carrier selective contacts.