Direct Bonding Using Low Temperature SiCN Dielectrics

Serena Iacovo, Fuya Nagano, Venkat Sunil Kumar Channam, Edward Walsby, Kath Crook, K. D. Buchanan, Anne Jourdain, Kris Vanstreels, Alain Phommahaxay, Eric Beyne

20222022 IEEE 72nd Electronic Components and Technology Conference (ECTC)31 citationsDOI

Abstract

For several 3D integration schemes, such as CoD2W and solder based D2W bonding, the thermal budget needs to be well below 250 °C due to the presence of temporary bonding materials. In this paper we present a new PECVD SiCN layer deposited at 175 °C and optimized for W2W bonding applications. The layer provides void-free W2W bonding interface characterized by high bond strength even at a relatively low (200 °C) post bond annealing temperature, enabling extreme thinning of the bonded stack. Moreover, it has been verified that the layer can withstand post bond annealing processes up to 350 °C without inducing the appearance of bonding voids.

Topics & Concepts

Materials scienceAnnealing (glass)Void (composites)Composite materialDielectricWire bondingAnodic bondingPlasma-enhanced chemical vapor depositionStack (abstract data type)Wafer bondingThermocompression bondingBondThermalThree-dimensional integrated circuitSiliconLayer (electronics)OptoelectronicsIntegrated circuitComputer scienceChipEconomicsTelecommunicationsProgramming languageFinancePhysicsMeteorology3D IC and TSV technologiesAdvanced ceramic materials synthesisElectronic Packaging and Soldering Technologies