Reversible shuffle twinning yields anisotropic tensile superelasticity in ceramic GeSe
Chong Wang, Zeya Li, Yingchun Cheng, Xiao‐Ji Weng, Yeqiang Bu, Kun Zhai, Tianyu Xue, Hongtao Yuan, Anmin Nie, Xiang‐Feng Zhou, Hongtao Wang, Yongjun Tian, Zhongyuan Liu
Abstract
Superelasticity is a reversible, nonlinear strain response to stress stimuli beyond the linear elastic regime. It is commonly associated with a martensitic transformation in its host material, usually a metal or polymer. Except for the ceramic crystals ZrO2 and BaTiO3, which show superelasticity under compressive stress, inorganic materials with covalent or ionic bonding usually do not exhibit superelastic behaviour because of large energy barriers for structural transitions. Here we show anisotropic tensile superelasticity in the ceramic crystal GeSe, which originates from reversible shuffle twinning. Through in situ transmission electron microscopy mechanical testing, we trace the evolution from a linear elastic behaviour to a nonlinear superelastic plateau in stress–strain curves and concurrently observe the generation of stripy-shaped twin domains along the <110> direction. Density functional theory calculations paired with molecular dynamics simulations reveal a release of elastic potential energy upon the shuffle twinning process from a Z-shaped to an anti-Z-shaped bond configuration, which is responsible for the observed tensile superelasticity. This mechanism makes the observed superelasticity highly directional. In line with the anisotropic Young’s modulus and Poisson’s ratio in GeSe, experiments confirm that superelastic response emerges only when we apply strain along or close to the zigzag direction. We expect to find similar anisotropic superelasticity in ceramic semiconductors with similar crystal structure such as SnSe, SnS or GeS. In situ mechanical testing and simulations unveil a reversible shuffle twinning mechanism enabled by bond switching, which gives rise to anisotropic tensile superelasticity in GeSe ceramics.