Improving electron mobility in MoS<sub>2</sub> field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition
Zhaofang Cheng, Shaodan He, Xiaona Han, Xudong Zhang, Lina Chen, Shijun Duan, Shimin Zhang, Minggang Xia
Abstract
A structural phase incorporation strategy was proposed to improve the electron mobility of MoS 2 FETs up to 237 cm 2 V −1 s −1 .
Topics & Concepts
Materials scienceConductanceElectron mobilityTransistorField-effect transistorContact resistanceElectron transport chainPhase (matter)Induced high electron mobility transistorOptoelectronicsElectronChannel (broadcasting)Phase transitionInterface (matter)NanotechnologyChemical physicsCondensed matter physicsLayer (electronics)Electrical engineeringComposite materialContact angleVoltageChemistryOrganic chemistryBiochemistryQuantum mechanicsSessile drop techniqueEngineeringPhysics2D Materials and ApplicationsMXene and MAX Phase MaterialsFerroelectric and Negative Capacitance Devices