Pure single-photon emission from an InGaN/GaN quantum dot
Mark Holmes, Tongtong Zhu, Fabien Massabuau, John Jarman, Rachel A. Oliver, Yasuhiko Arakawa
Abstract
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.
Topics & Concepts
Quantum dotMaterials sciencePhotonicsOptoelectronicsPhotonQuantum key distributionWide-bandgap semiconductorExcitationQuantum opticsPhysicsOpticsQuantum mechanicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesDiamond and Carbon-based Materials Research