Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications
Shahnaz Kossar, R. Amiruddin, Asif Rasool, M.C. Santhosh Kumar, Nagamalleswari Katragadda, P. Mandal, Nafis Ahmed
Topics & Concepts
Bismuth ferriteMaterials scienceThin filmX-ray photoelectron spectroscopyDopingFerroelectricityNeodymiumTetragonal crystal systemBismuthOptoelectronicsAnalytical Chemistry (journal)NanotechnologyMultiferroicsNuclear magnetic resonanceDielectricOpticsCrystallographyCrystal structureMetallurgyLaserChemistryChromatographyPhysicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Piezoelectric Materials