A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment
Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo
Abstract
A 28-GHz-band GaN HEMT MMIC Doherty power amplifier has been developed by using 0.15-µm GaN HEMT MMIC technology. The Doherty amplifier was designed by adaptively adjusting a load resistance division to a carrier amplifier (CA) and a peaking amplifier (PA) according to an output power balance between the CA and PA. The fabricated GaN HEMT MMIC Doherty amplifier exhibited a maximum drain efficiency of 54% and a maximum power-added efficiency of 44% at 29.1 GHz, with a saturation output power of 30 dBm. In addition, a drain efficiency of 33% was achieved at 29.1 GHz on a 9-dB output back-off condition.
Topics & Concepts
Monolithic microwave integrated circuitAmplifierHigh-electron-mobility transistorElectrical engineeringMaterials sciencePower-added efficiencyDoherty amplifierRF power amplifierLinear amplifierOptoelectronicsEngineeringTransistorCMOSVoltageAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials