Copper Vanadate (Cu<sub>3</sub>V<sub>2</sub>O<sub>8</sub>): (Mo, W) Doping Insights to Enhance Performance as an Anode for Photoelectrochemical Water Splitting
Supriya Pulipaka, Nikhila Boni, Praveen Meduri
Abstract
Molybdenum (Mo) and tungsten (W) doping in copper vanadate (Cu3V2O8) gives important insights into the modulation of carrier mobility and charge separation efficiency. Mo and W atoms have more valence electrons than vanadium(V), providing extra electrons to the host lattice of Cu3V2O8 (CVO) resulting in raising the Fermi level wherein impurity energy levels will act as donors. Doped samples have shown current densities of ∼0.6 mA cm–2, which is 3 times higher than that of pristine CVO, i.e., 0.18 mA cm–2. Mo-doped CVO showed an excellent stability for 4 h with 6.8% loss in current density.
Topics & Concepts
VanadateVanadiumDopingMaterials scienceTungstenMolybdenumAnodeCopperAnalytical Chemistry (journal)ImpurityElectron mobilityFermi levelElectronInorganic chemistryChemistryElectrodeMetallurgyOptoelectronicsPhysical chemistryPhysicsOrganic chemistryChromatographyQuantum mechanicsCopper-based nanomaterials and applicationsAdvanced Photocatalysis TechniquesElectronic and Structural Properties of Oxides