Mn<sup>2+</sup>-Activated Photostimulable Persistent Nanophosphors by Pr<sup>3+</sup> Codoping for Rewritable Information Storage
Feng Gao, Qing Pang, Dangli Gao, Chaoyang Jia, Hong Xin, Yong Pan, Yuhua Wang, Sining Yun
Abstract
Photostimulable luminescence (PSL) nanophosphors, which exhibit superior features including controllable energy storage and efficient photon release upon light stimulation, are desirable for optical signal storage. However, trap tuning of the storage phosphor remains a great challenge. Herein, the PSL of Zn 2 GeO 4:Mn 2+ nanophosphors is enhanced via creating deep traps through nonequivalent Pr 3+ doping. The possible enhanced mechanisms are analyzed combined with doping models using the first-principles theory. A mechanism is proposed based on changing the coordination environment of Mn 2+, creating deep traps and tuning the band gap structure, and thus providing the chance for electrons’ photoionization and PSL generation. As a result, the prepared nanophosphors demonstrate the superior functionalities for optical signal storage. This work not only offers an insight into defect engineering through doping strategies for developing PSL materials but also supplies a good candidate for optical information storage.