A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range
Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
Abstract
An RRAM macro equips a hybrid self-tracking reference and a low ripple charge pump is presented. It realizes configurable read windows and a consistent write performance at operation voltage range of 1.62V~3.63V. It shows 6.5ns and 10ns access time at 0.7V can be achieved for OTP (one-time-program) and 10K endurance applications, respectively.
Topics & Concepts
RippleCharge pumpVoltageMacroElectrical engineeringResistive random-access memoryRange (aeronautics)Computer scienceTracking (education)Window (computing)Materials scienceOptoelectronicsElectronic engineeringCapacitorEngineeringOperating systemPedagogyPsychologyProgramming languageComposite materialAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices