Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors
Jaewook Yoo, Seohyeon Park, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Minah Park, Soyeon Kim, Jo Hak Jeong, JungWoo Bong, Keun Heo, Kiyoung Lee, Tae‐Wan Kim, Peide D. Ye, Hagyoul Bae
Abstract
In this study, we investigate the origins of low-frequency noise (LFN) and 1/ f noise in Cu 2 O thin-film transistors (TFTs). The static direct current (DC) I – V characterization demonstrates that the channel resistance ( R ch ) contributes significantly to mobility degradation in the TFTs, with channel thickness ( t ch ) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/ f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in t ch, contributed simultaneously. Increased R ch contributed more significantly to the 1/ f noise than to the contact resistance ( R C ), as evidenced by the R C configuration of the measurements, which also revealed that R C depends upon t ch . This study demonstrates that t ch is a major noise source in Cu 2 O TFTs and presents guidelines for the development of Cu 2 O TFTs and potential high-mobility p-type oxide semiconductors.